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| AP9980H/J Advanced Power Electronics Corp. Low Gate Charge Single Drive Requirement Fast Switching Performance G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 80V 45m 21.3A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9980J) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 80 25 21.3 13.4 80 41.7 0.33 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.0 110 Units /W /W Data and specifications subject to change without notice 200406041 AP9980H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 80 1 - Typ. 0.07 20 18 5 11 11 20 29 30 135 96 1.6 Max. Units 45 55 3 10 100 100 30 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A VGS=4.5V, ID=8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=12A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS=25V ID=12A VDS=64V VGS=4.5V VDS=40V ID=12A RG=3.3,VGS=10V RD=3.3 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1810 2900 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=20A, VGS=0V IS=12A, VGS=0V, dI/dt=100A/s Min. - Typ. 57 140 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9980H/J 60 50 T C =25 o C 50 ID , Drain Current (A) 40 ID , Drain Current (A) 10V 6.0V 5.0V 4.5V T C =150 o C 40 10V 6.0V 5.0V 4.5V 30 30 20 20 V G =3.0V 10 10 V G =3.0V 0 0 3 6 9 12 15 18 0 3 6 9 12 15 18 0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 54 2.2 ID=8A Normalized R DS(ON) 50 2.0 T C =25 C o 1.8 I D = 12 A V G =10V RDS(ON) (m ) 1.6 1.4 46 1.2 1.0 42 0.8 0.6 38 0.4 trr -50 0 50 100 3 5 7 9 11 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Qrr 150 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 8 2.5 6 2 T j =150 C IS(A) 4 o T j =25 C o VGS(th) (V) 1.2 1.5 1 2 0.5 0 0 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9980H/J f=1.0MHz 12 10000 I D = 12 A 10 VGS , Gate to Source Voltage (V) 8 6 C (pF) V DS = 4 0V V DS = 50 V V DS = 64 V C iss 1000 4 100 C oss C rss 2 0 0 10 20 30 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 10 Normalized Thermal Response (R thjc) 10us Duty factor=0.5 0.2 ID (A) 0.1 1ms 10ms 100ms T C =25 C Single Pulse o 0.1 0.05 PDM 0.02 0.01 1 t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC DC Single Pulse 0.1 0.1 1 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Qrr 1 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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